| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) | 330MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 330mV/0.33V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor Applications • Low-frequency General-Purpose Amplifier, muting circuit. Features • Large current capacitance. • Low collector-to-emitter saturation voltage . • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance |
| 描述与应用 | NPN平面外延硅晶体管 应用 •低频通用放大器，静音电路。 特点 •大电流容量。 •低集电极 - 发射极饱和电压。 •超小封装，有利于在终端产品的小型化。 •小导通电阻 |