| 反向电压VrReverse Voltage | 200V |
| 平均整流电流IoAverage Rectified Current | 100mA/0.1A |
| 最大正向压降VFForward Voltage(Vf) | 1.2V |
| 反向恢复时间TrrReverse Recovery Time | 60NS |
| 最大耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | FEATURES •TOSHIBA Diode Silicon EpitAxiAl PlAnAr Type •High VoltAge Switching ApplicAtions •Two-pin smAll pAckAges Are suitAble for higher mounting densities. •Excellent in forwArd current And forwArd VoltAge •chArActeristics : VF (2) = 0.90V (typ.) •FAst reVerse recoVery time : trr = 60ns (typ.) •SmAll totAl cApAcitAnce : CT = 1.5pF (typ.) |
| 描述与应用 | 特点 •东芝二极管硅外延平面型 •高电压开关应用 •两针小包装适合于高密度安装。 •优异的正向电流和正向电压 •特点：VF（2）=0.90V（典型值） •快速反向恢复时间：TRR =为60ns（典型值） •小总电容：CT=1.5pF的（典型值） |