| 最大源漏极电压Vds Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
18V |
| 最大漏极电流Id Drain Current |
200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
1.8Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1-3V |
| 耗散功率Pd Power Dissipation |
350mW/0.35W |
| Description & Applications |
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor Features 60 V, 300 mA N-channel Trench MOSFET Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology |
| 描述与应用 |
表面贴装 N沟道增强型场效应晶体管 特性 60 V，300毫安N通道沟道MOSFET 适用于逻辑电平栅极驱动源 开关速度非常快 表面贴装封装 沟道MOSFET技术 |