| 最大源漏极电压Vds Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
| 最大漏极电流Id Drain Current |
115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
3.2Ω/Ohm @50mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1-2.5V |
| 耗散功率Pd Power Dissipation |
300mW/0.3W |
| Description & Applications |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 |
N沟道增强型场效应晶体管 特性 N沟道增强型场效应晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 铅，卤素和锑免费，符合RoHS标准 “绿色”设备 符合AEC-Q101高可靠性标准 |