| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 40V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 330mW/0.33W |
| Description & Applications | 60V SOT23 N-channel enhancement mode MOSFET Description A small signal MOSFET for general purpose switching applications. Features 60V SOT23 N-channel enhancement mode MOSFET Fast switching speed Low gate drive capability SOT23 package |
| 描述与应用 | 60V SOT23 N沟道增强型MOSFET 描述 小信号MOSFET通用开关应用。 特性 60V SOT23 N沟道增强型MOSFET 开关速度快 低栅极驱动能力 SOT23封装 |