| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 280mA/0.28A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 7.5Ω@ VGS = 5V,ID = 50mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant |
| 描述与应用 | 双N沟道增强型场效应晶体管 特点 双N沟道MOSFET 低导通电阻？ 低栅极阈值电压 低输入电容？ 开关速度快吗？ 低输入/输出漏？ 超小型表面贴装封装 无铅设计/符合限制有害物质指令（RoHS）规范要求 |