| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−20V |
| 集电极连续输出电流ICCollector Current(IC) |
-30mA |
| 截止频率fTTranstion Frequency(fT) |
300MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
70~140 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-100mV/-0.1V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 |
硅PNP外延刨床类型 对于高频放大 互补2SC2295 特点 高转换频率FT。 迷你型包装，让精简的设备和通过自动插入带包装盒包装 |