| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | silicon PNP epitaxial driver stage amplifier application； switching applications |
| 描述与应用 | 硅PNP外延 驱动级放大器的应用; 开关应用 |