| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −35V |
| 集电极连续输出电流ICCollector Current(IC) | −800mA/-0.8A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −700mV/-0.7V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | Silicon PNP Epitaxial Type (PCT process) • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884 |
| 描述与应用 | 硅PNP外延式（PCT的进程） •高直流电流增益：HFE= 100到320 •适用于1瓦的放大器输出级 •小型扁平封装 •PC=1.0〜2.0 W（安装在陶瓷基板上） •互补2SC2884 |