| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流ICCollector Current(IC) |
−200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) |
180MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
250~500 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ |
| 描述与应用 |
塑料封装晶体管 特点 功耗 PCM：0.2 W（T环境温度= 25℃） 集电极电流 ICM：-0.2à 集电极 - 基极电压 V（BR）CBO：-60 V 操作和存储结温范围 TJ，TSTG：-55℃至+150℃ |