| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -160V |
| 集电极连续输出电流ICCollector Current(IC) | -80mA |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −700mV/-0.7V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP/NPN epitaxial planar silicon transistors High-voltage switching, AF power amp, 100W output predriver application high breakdown voltage； small output capacitance |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高压开关，自动对焦100W输出功放，前级驱动器应用 击穿电压高; 小的输出电容 |