| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Ultrasmall-sized package permitting sets to be smallsized, slim |
| 描述与应用 | 高速开关应用 特点 ·采用的FBET过程。 ·高击穿电压：VCEO=（ - ）50V。 ·大电流capacitiy和高FT。 ·超小尺寸封装，允许小尺寸，超薄套 |