| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -700mA/-0.7A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | for high current drive application silicon PNP epitaxial type high collector current； high gain band width product； excellent linearity of DC forward current gain； low collector to emitter saturation voltage |
| 描述与应用 | 为高电流驱动应用 硅PNP外延型 高集电极电流; 高增益带宽产品; 卓越的线性度直流正向电流增益; 集电极到发射极饱和电压低 |