| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
-160V |
| 集电极连续输出电流ICCollector Current(IC) |
-140mA/-0.14A |
| 截止频率fTTranstion Frequency(fT) |
150MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
100~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-140mV/-0.14V |
| 耗散功率PcPoWer Dissipation |
500mW/0.5W |
| Description & Applications |
PNP/NPN epitaxial planar silicon transistors High-voltage switching Predriver applications adoption of FBET process； high breakdown voltage ； excellent linearity of hFE and small Cob； fast switching speed |
| 描述与应用 |
PNP/ NPN外延平面硅晶体管 高压开关 预驱动器应用 采纳的FBET过程; 击穿电压高; 卓越的HFE线性度; 开关速度快 |