| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−40V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
400MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
150~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−450mV/-0.45V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
High frequency amplifier and switching PNP silicon epitaxial transistor mini mold high fT； complementary to 2SC3739 |
| 描述与应用 |
高频放大器和开关 PNP硅外延晶体管 小型模具 高频率; 2SC3739互补 |