| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | For low frequency amplify application silicon PNP epitaxial type small collector to emitter saturation voltage； excellent linearity DC forward gain； for hybird IC，small type machine low frequency voltage amplify application |
| 描述与应用 | 对于低频放大应用 硅PNP外延型 小集电极到发射极饱和电压; 出色的线性直流正向增益; 摄录IC，小型机低频电压放大应用 |