集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
截止频率fTTranstion Frequency(fT) | 250MHz |
直流电流增益hFEDC Current Gain(hFE) | 70 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -100mV/-0.1V |
耗散功率PcPoWer Dissipation | 200mW/0.2W |
Description & Applications | silicon PNP epitaxial type high voltage and high current; applications: switching circuit, inverter circuit,interface circuit,driver circuit |
描述与应用 | 硅PNP外延型 高电压和高电流; 应用范围: 开关电路,逆变电路,接口电路,驱动电路 |