| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 270~560 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. |
| 描述与应用 | 对于低频放大应用 硅PNP外延型 特点 ●小集电极到发射极饱和电压。 VCE（sat）=-0.3V最大 ●直流前锋出色的线性度获得。 ●超小型封装，便于安装 应用 对于混合集成电路，小型机低频电压放大应用 |