| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 1.8GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~100 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR high fT； high speed switching； complementary to 2sc4176 |
| 描述与应用 | 高速开关 PNP硅外延晶体管 高截止频率; 高速交换; 互补2sc4176 |