| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -8A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -220mV/-0.22V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS low saturation voltage； fast switching speed； large current capacity |
| 描述与应用 | 硅互补 小信号晶体管的 低饱和电压; 开关速度快; 通流容量大 |