| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | silicon PNP epitaxial type high voltage and high current； Applications · Swicthing circuits, inverter circuits, interface circuits,driver circuits. Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. |
| 描述与应用 | 硅PNP外延型 高电压和高电流; 应用 ·Swicthing电路，逆变器电路，接口电路，驱动器电路。 特点 ·片上偏置电阻：R1=10kΩ上，R2=10kΩ的。 |