| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | Silicon PNP Epitaxial Type Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SC4409 |
| 描述与应用 | 硅PNP外延型 功率放大器应用 电源开关应用 •低饱和电压VCE（sat）=-0.5 V（最大值）（IC=-1 A） •高速开关时间：TSTG=300纳秒（典型值） •小型扁平封装 •PC=1.0〜2.0 W（安装在陶瓷基板上） •互补2SC4409 |