| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−20V |
| 集电极连续输出电流ICCollector Current(IC) |
-30mA |
| 截止频率fTTranstion Frequency(fT) |
230MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
135~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
|
| 耗散功率PcPoWer Dissipation |
150W |
| Description & Applications |
PNP epitaxial planar silicon transistor High-frequency general purpose amp applications ideal suited for RF FM amplifiers，mixers，oscillators，converters，and IF amplifiers； high power gain |
| 描述与应用 |
PNP外延平面硅晶体管 通用的高频 放大器的应用 理想的适合于FM射频放大器，混频器，振荡器，转换器，和IF放大器; 高功率增益 |