| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流ICCollector Current(IC) | −200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −800mV/-0.8V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | PNP epitaxial planat silicon transistor High-voltage driver applications high breakdown voltage； adoption of MBIT process； excellent hFE linearity |
| 描述与应用 | PNP的外延planat硅晶体管高电压驱动器应用程序 击穿电压高; 通过MBIT过程的; 出色的放大线性度 |