| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -160mV/-0.16V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP/NPN Epitaxial Planar silicon transistors low collector-to-emitter saturation voltage； complementary to 2SA1753 |
| 描述与应用 | PNP/ NPN平面外延硅晶体管 低集电极 - 发射极饱和电压; 互补2SA1753 |