| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | −200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) | 1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~140 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -70mV |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP epitaxial planar silicon transistor High speed switching applications Features fast switching speed； low collector saturation voltage； high gain-bandwidth product； small collector capacitance |
| 描述与应用 | PNP外延平面硅晶体管 高速开关应用 特点 开关速度快; 集电极饱和电压低; 高增益带宽积; 小集电极电容 |