| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -600V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −600V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 15MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 56~180 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1.2V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | high-voltage switching transistor telephone, power supply Features high breakdown voltage； low saturation voltage； high switching speed |
| 描述与应用 | 高压开关晶体管 电话，电源供应器; 特点 击穿电压高; 低饱和电压; 高开关速度 |