| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 55~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | for low frequency power amplify application silicon PNP epitaxial type high fT； excellent linearity of DC forward current gain； high collector current ； radio，tape recorder，small tape stereo，etc； low frequency power amplify circuit with 2 to 3.5w output |
| 描述与应用 | 低频功率放大应用硅PNP外延型 高截止频率; 卓越的线性度直流正向电流增益; 高集电极电流; 收音机，录音机，磁带立体声小，等; 2到3.5W输出低频功率放大电路 |