| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -400mA/-0.4A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~600 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -110mV/-0.11V |
| 耗散功率PcPoWer Dissipation | 100mW/0.1W |
| Description & Applications | silicon PNP epitaxial type general purpose amplifier applications； switching and muting switch application； low saturation voltage； large collector current |
| 描述与应用 | 硅PNP外延型 通用放大器应用; 开关静音开关应用; 低饱和电压; 大的集电极电流 |