| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −32V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 625mW/0.625W |
| Description & Applications | PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342 |
| 描述与应用 | PNP硅晶体管 描述 •中等功率放大器 特点 •大集电极电流：ICMAX=-500毫安 •适用于低电压操作，因为它的低饱和电压 •互补配对2SC5342 |