| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流ICCollector Current(IC) |
−100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
120~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率PcPoWer Dissipation |
150mW/0.15W |
| Description & Applications |
PNP Silicon epitaxial Transistor For low frequency amplifier applications Features Small collector to emitter saturation voltage Excellent linearity of DC forward gain Super mini package for easy mounting Applications For hybrid Ic,small type machine low frequency voltage amplifier applications |
| 描述与应用 |
PNP硅外延晶体管 对于低频放大器应用 特点 小集电极到发射极饱和电压 出色的线性直流正向增益 易于安装超小型封装 应用 对于混合IC，小型机低频电压放大器的应用 |