| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | -2.5A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~560 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -320mV/-0.32V |
| 耗散功率PcPoWer Dissipation | 600mW/0.6W |
| Description & Applications | PNP Silicon epitaxial Transistor For DC-DC converter For various driver circuits Features • Low collector to emitter saturation voltage VCE(sat),large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary to 2SC5592 |
| 描述与应用 | PNP硅外延晶体管 用于DC-DC转换 对于各种驱动电路 特点 •低集电极到发射极饱和电压VCE（饱和），大电流电容 •高速开关 •迷你型3引脚封装，允许裁员和变薄的设备。 •互补型2SC5592 |