集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流ICCollector Current(IC) | -1A |
截止频率fTTranstion Frequency(fT) | 170MHz |
直流电流增益hFEDC Current Gain(hFE) | 160~560 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -100mV/-0.1V |
耗散功率PcPoWer Dissipation | 150mW/0.15W |
Description & Applications | Silicon PNP epitaxial planar type PNP Silicon epitaxial planar type For DC-DC converter Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • S-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
描述与应用 | PNP硅外延平面型 PNP硅外延平面型 用于DC-DC转换器 特点 •低集电极 - 发射极饱和电压VCE(星期六) •高速开关 •S-迷你型包装,允许裁员和通过磁带包装设备和自动插入变薄 |