| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar type High voltage discharge, High speed switching, Low Noise Features 1) High speed switching. 2) Low saturation voltage, 3) Strong discharge power for inductive load and capacitance load. 4) Complements to 2SC5825 5)Low noise Applications High speed switching |
| 描述与应用 | PNP硅外延平面型 高压放电，高速开关，低噪声 特点 1）高速开关。 2）低饱和电压， 3）强大的放电功率为感性负载和容性负载。 4）补充型2SC5825 5）低噪音 应用 高速开关 |