| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | -70mA |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~150 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar type For general amplification Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | PNP硅外延平面型 对于一般的放大 特点 •高正向电流传输比HFE •迷你型包装，使瘦身带包装盒包装的设备和通过自动插入。 |