| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 400MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar type Medium power transistor Features 1) High speed switching. 2) Low saturation voltage, 3) Strong discharge power for inductive load and capacitance load. 4) Complements to 2SC5876 Applications High speed switching Small signal low frequency amplifier |
| 描述与应用 | PNP硅外延平面型 中等功率晶体管 特点 1）高速开关。 2）低饱和电压， 3）强大的放电功率为感性负载和容性负载。 4）补充型2SC5876 应用 高速开关 低频小信号放大器 |