| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP epitaxial planar transistor General Purpose Transistors FEATURES High Voltage NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements |
| 描述与应用 | PNP外延平面晶体管 通用晶体管 特点 高电压 NPN补充：L2SC1623 我们声明，对产品材料遵守RoHS要求 |