| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
−20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−20V |
| 集电极连续输出电流ICCollector Current(IC) |
-2A |
| 截止频率fTTranstion Frequency(fT) |
180MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
300~600 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−500mV/-0.5V |
| 耗散功率PcPoWer Dissipation |
2W |
| Description & Applications |
PNP Silicon epitaxial planar transistor Applications Audio frequency power amplifier and switching application Features World standard miniature package High DC current gain Low VCE Complement to 2SD1614 |
| 描述与应用 |
PNP硅外延平面晶体管 应用 音频功率放大器和开关应用 特点 世界标准的微型封装 高直流电流增益 低VCE 补充2SD1614 |