| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | -700mA/-0.7A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -120mV/-0.12V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | Low-Voltage High-Current Amplifier,Muting Applications PNP Silicon epitaxial planar transistor Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC’s. |
| 描述与应用 | PNP硅外延平面晶体管 低电压高电流放大器，静音应用 特点 低集电极 - 发射极饱和电压。 体积非常小，因此很容易提供高密度，小型混合IC。 |