| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −700mV/-0.7V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor High current switching applications Applications voltage regulators,relay drivers,lamp drivers. electrical equipment Feature Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching speed Very small size making it easy to provide highdensity, small-sized hybrid IC’s |
| 描述与应用 | PNP硅外延平面晶体管 高电流开关应用 应用 电压调节器，继电器驱动器，灯驱动器，电气设备 特点 低集电极 - 发射极饱和电压 大电流容量，广ASO 开关速度快 规模非常小，因此很容易提供高密度，小型混合IC |