| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | −10A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 130~260 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率PcPoWer Dissipation | 1.3W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-voltage switching Complementary to 2SD1752A Features Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | PNP硅外延平面晶体管 对于低电压开关 补充2SD1752A 特点 低集电极到发射极饱和电压VCE（SAT） 高速开关 I型包可以直接焊接在印刷电路板等小型电子设备的散热片。 |