集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −32V |
集电极连续输出电流ICCollector Current(IC) | -2A |
截止频率fTTranstion Frequency(fT) | 100MHz |
直流电流增益hFEDC Current Gain(hFE) | 120~270 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −800mV/-0.8V |
耗散功率PcPoWer Dissipation | 500mW/0.5W |
Description & Applications | PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1766 |
描述与应用 | PNP硅外延平面晶体管 中等功率晶体管 特点 1)低VCE(sat)的。 2)补充2SD1766 |