集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
截止频率fTTranstion Frequency(fT) | 180MHz |
直流电流增益hFEDC Current Gain(hFE) | 120~270 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率PcPoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP Silicon epitaxial planar transistor Low Frequency Transistor Features Low VCE(sat) High breakdown voltage. Complements to 2SD1782K. |
描述与应用 | PNP硅外延平面晶体管 低频晶体管 特点 低VCE(六) 高击穿电压。 补充型2SD1782K。 |