| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -16V |
| 集电极连续输出电流ICCollector Current(IC) | -5A |
| 截止频率fTTranstion Frequency(fT) | 140MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Features 1) Low collector-to-emitter saturation voltage 2)Large current capacity and wide ASO 3) High hFE 4) Complements to 2SD1952. |
| 描述与应用 | PNP硅外延平面晶体管 特点 1）低集电极 - 发射极饱和电压 2）大电流容量，广ASO 3）高hFE 4）补充型2SD1952。 |