| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -5A |
| 截止频率fTTranstion Frequency(fT) | 320MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1.3W |
| Description & Applications | PNP Silicon epitaxial planar transistor High current switching applicatons Applications DC-DC converters ,motor drivers ,relay drivers,lamp drivers Features 1) Low collector-to-emitter saturation voltage 2)Large current capacity 3) Fast switching speed 4) Very small size package |
| 描述与应用 | PNP硅外延平面晶体管 高电流开关applicatons， 应用 DC-DC转换器，电机驱动器，继电器驱动器，灯驱动器 特点 1）低集电极 - 发射极饱和电压 2）大电流容量 3）快速开关速度 4）非常小尺寸封装 |