| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流ICCollector Current(IC) | -5.5mA |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −550mV/-0.55V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Features Low VCE(sat) Complementary to 2SD2402 |
| 描述与应用 | PNP硅外延平面晶体管 特点 低VCE（饱和） 补充型2SD2402 |