| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−60V |
| 集电极连续输出电流ICCollector Current(IC) |
-3A |
| 截止频率fTTranstion Frequency(fT) |
160MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−600mV/-0.6V |
| 耗散功率PcPoWer Dissipation |
2W |
| Description & Applications |
PNP Silicon epitaxial planar transistor Features Low VCE(sat) Complementary to 2SD2403 |
| 描述与应用 |
PNP硅外延平面晶体管 特点 低VCE（饱和） 补充型2SD2403 |