| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−15V |
| 集电极连续输出电流ICCollector Current(IC) |
-1A |
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
Power Transistor Features Low saturation voltage Complements to 2SD2444K |
| 描述与应用 |
功率晶体管 特点 低饱和电压 补充型2SD2444K |