| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 60MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~800 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-frequency amplification Features Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat) Mini Power type package |
| 描述与应用 | PNP硅外延平面晶体管 对于低频放大 特点 大收藏家功耗PC 低集电极到发射极饱和电压VCE（SAT） 迷你功率型封装 |