| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
−20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
-16V |
| 集电极连续输出电流ICCollector Current(IC) |
-5A |
| 截止频率fTTranstion Frequency(fT) |
320MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−550mV/-0.55V |
| 耗散功率PcPoWer Dissipation |
2W |
| Description & Applications |
PNP Silicon epitaxial planar transistor FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension and is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector saturation voltage |
| 描述与应用 |
PNP硅外延平面晶体管 低频功率放大器和中速切换 2SB1628具有高电流容量小尺寸和DC/ DC转换器和电机驱动器的理想选择。 特点 •高电流电容 •低集电极饱和电压 |